光刻胶在场发射显示器(FED)制备中的应用  

Application of Photoresist in Field Emission Display Preparation

作　　者：雷晓阳[1] 张永爱[1] 姚亮[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《现代显示》2006年第12期53-56,共4页Advanced Display

基　　金：国家"863"计划"十五"平板显示重大专项(2005AA303G10)

摘　　要：论述了光刻胶在场发射显示器制备中的应用,采用丝网印刷技术将光刻胶转移到镀有金属薄膜的玻璃基片上,利用紫外光对其进行光刻,通过视频显微镜对每一步实验过程进行观察和测试,以确定最佳实验工艺。结果表明,利用200目的丝网将光刻胶印刷至基片上,在85℃下保温60分钟,曝光55s,采用1%的25℃碳酸纳显影60s,110℃下固膜30分钟后,蚀刻出的金属电极精细整齐,为制备FED精细电极奠定了基础。Application of photoresist in FED Preparation is discussed in this paper. Photoresist is coated on the surface of metal film-coated glass by screen printing and achieved by exposing to UV lamp, The results of testing process are observed by video microscope so that the optimal experiment technics is confirmed. It shows that the edge of metal electrode is fine and order after wet chemical etching by following technics： printing photoresist on glass by screen printing, prebaking at 85℃/60min,exposing 55s,developing 60s by 1%and 25% Na2CO3 solution, postbaking at 110%/30min. The techniques can be applied to preparation of fine electrode of FED.

关 键 词：场发射显示器 光刻胶 曝光时间 显影 蚀刻 

分 类 号：TN141[电子电信—物理电子学]