Metal cathode patterning for OLED by nanosecond pulsed laser ablation  

作　　者：LIU Chen ZHU Guang-xi LIU De-ming 

机构地区：[1]The Electronics and Information Department,Huazhong University of Sci. ＆ Technol. ,Wuhen 430074,China [2]Institute of Optoelectronics Science and Engineering,Huazhong University of Sci. and Technol., Wuhan 430074, China

出　　处：《Optoelectronics Letters》2006年第6期426-429,共4页光电子快报（英文版）

摘　　要：In this paper,nanosecond pulsed laser is introduced to selectively ablate away indium tin oxide film and metal film without destroying the underlying layers for fabricating organic light-emitting diodes.By varying density of energy,pulse number and width of the laser,the influence on morphology of the laser trenches of indium tin oxide and metal films are investigated.It is presented that uniform ablation trench can be obtained with 16 laser pulses at 0.15 J/cm^2 for aluminum film and 10 laser pulses at 0.65 J/cm^2 for indium tin oxide film.It is found that the characteristics of the organic light-emitting diodes prepared with laser ablation are almost the same as those of that prepared with conventional patterning method.

关 键 词：金属阴极 OLED 纳秒脉冲激光消融 金属薄膜 

分 类 号：TN383[电子电信—物理电子学]