应用铟源的反应蒸发制备In_2O_3透明导电膜  

Preparation of Transparent Conductive In_2O_3 Films by Reactive Evaporation from an Indium Source

作　　者：张曙[1] 罗新[1] 王乔民 

机构地区：[1]云南大学物理系

出　　处：《无机材料学报》1996年第3期510-514,共5页Journal of Inorganic Materials

摘　　要：本工作说明，在低压氧气氛中。应用铟源的反应蒸发很容易淀积高质量的Ｉｎ２Ｏ３透明导电膜．旦然没有使用锡杂质，但所得膜的性能可以和最好的掺锡的Ｉｎ２Ｏ３膜相比．膜电阻率达２～３×１０￣４Ω·ｃｍ，可见光透过率超过９０％，并且膜生长速率高达２１９／ｍｉｎ．文章对成膜过程作了分析，报道了膜的最佳淀积条件，对由于偏离最佳淀积参数而导致的异常膜的形成机制也进行了讨论．It was shown that high transparent and high conductive In_2O_3 films can be easily deposited by simple reactive evaporation from an indium source in a low pressure oxygen atmosphere. Although no tin dopant was used,the properties of the film were comparable to that of the best tin-doped In2O3 films. The resistivities of the films were 2-3×10￣-4Ωn.cm, the visible transmissivity was beyond 90%, and the film growth rate reached was 219A/min. The process and the optimum deposition conditions of the films were analyzed. The formation mechanism of the abnormal films caused by departure from the optimums of the deposition parameters were also discussed.

关 键 词：氧化铟 导电薄膜 蒸发 半导体薄膜 

分 类 号：O484.1[理学—固体物理] TN304.904[理学—物理]