电弧放电制备碳化硅纳米棒  

PREPARATION OF SILICON CARBIDE NANORODS BY ARC DISCHARGE

作　　者：吴旭峰[1] 凌一鸣[1] 

机构地区：[1]东南大学电子工程系,南京210018

出　　处：《硅酸盐学报》2006年第10期1283-1286,共4页Journal of The Chinese Ceramic Society

摘　　要：用电弧放电法制备了碳化硅(SiC)纳米棒。将摩尔分数为50%C,25%SiO2和25%Si粉末充分混合,填入已在中心钻孔的石墨棒中,作电弧放电阳极,水冷铜块作阴极,腔内充66.5kPa氩气,放电电流为80A。分析放电后沉积在腔内壁的粉末,高分辨率透射电镜照片表明:粉末中有结晶良好的SiC纳米棒,直径约10～20nm,长径比为10以上,并且纳米棒头部缀有金属纳米粒子。X射线衍射分析表明:粉体中主相为β-SiC,有少量Cu,Raman光谱中775cm-1有1个尖锐峰。分析认为,少量阴极材料Cu被电弧蒸发作为催化剂并由气液固过程生成了SiC纳米棒。Silicon carbide nanorods were synthesized by arc discharge. The cathode is a water-cooling copper mass and the anode is a mixture of 50 %（ in mole, the same below） carbon, 25% silicon oxide and 25% silicon. The arc discharge is created in 66.5 kPa Ar atmosphere at the current of 80 A. After about 60 s, some soot generated during the discharge deposits on the copper cathode and inner chamber. X-ray diffraction analysis of soot reveals that the nanorods are single crystalline β-SiC and Raman spectrum shows a SiC characteristic peak at 775 cm^-1. The morphology and microstructure of SiC nanorods are characterized by a high resolution transmission electron microscope. The diameter of nanorods is 10-20 nm and the length to diameter ratio is more than 10. The result shows that the SiC nanorods grow by vapor-liquid-solid mechanism,and were catalyzed by Cu vapored from the cathode.

关 键 词：碳化硅 纳米棒 电弧放电 气液固过程 

分 类 号：TB71[一般工业技术—真空技术] TB383