掺镧钛酸铅铁电薄膜的电畴与热释电性能研究  

Investigation of domain and pyroelectric properties of lanthanum-doped lead titanate ferroelectric thin films

作　　者：刘洪[1] 蒲朝辉[1] 龚小刚[1] 肖定全[1] 朱建国[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《高技术通讯》2006年第11期1149-1153,共5页Chinese High Technology Letters

基　　金：国家自然科学重点基金（50132020）和国家自然科学基金（60471044）资助项目.致谢：电子科技大学的黄惠东同学为本研究进行了PFM分析,四川大学的朱居木、高升吉老师进行了XRD分析,井与作者进行了有益的讨论,谨向他们表示谢意.

摘　　要：采用射频磁控溅射技术在Pt／Ti／SiO2／Si（100）基底上生长了掺镧钛酸铅[（Pb0.9Ld0.1）TiO3，PLT10]铁电薄膜。用X射线衍射研究了PLT10薄膜的结晶相结构。分别使用原子力显微镜和压电响应力显微镜观察了PLT10铁电薄膜的表面形貌和对应区域的电畴结构。测试了PLT10铁电薄膜的电学参数，研究了PLT10铁电薄膜的制备条件与其性能之间的关系。发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365，介电损耗tgδ为0．02，热释电系数γ为2．20×10^-8C·（cm2·K）^-1，可以满足制备非制冷红外探测器的需要。Lanthanum-doped lead titanate [ （ Pb0.9 La0.1 ） Ti0. 975O3, PLT10 ] ferroelectric thin films were grown on Pt/Ti/SiO2/ Si（100） substrates by using RF magnetron sputtering. The crystaXline properties of PLT10 thin films were studied by X- ray diffraction （XRD）. The surface topography and domain structure which were produced by spontaneous polarization of the corresponding surface region in PLT10 ferroeleetric thin films were observed using atomic force microscopy （AFM） and piezoresponse force microscopy （PFM）, respectively. The relationship between fabricating conditions and the properties of PLT10 thin films was studied. It was found that PLT10 thin films fabricated under the optimized conditions possessed a low dielectric constant （εr = 365）, a low dielectric loss（tgδ= 0.02）, and a large pyroelectric coefficient （ 7 = 2.20×10^-8C·（cm^2·K）^-1）, respectively. The PLT thin films could meet the needs for uncooled pyroelectric infrared sensors.

关 键 词：掺镧钛酸铅 铁电薄膜 溅射 热释电 

分 类 号：O484.4[理学—固体物理]