晶格氧对LaNiO_(3-x)薄膜导电性的影响  

A Study on the Effect of the Lattice Oxygen on the LaNiO_(3-x) Thin Films

作　　者：郑丁葳[1] 赵强[1] 王基庆[2] 

机构地区：[1]华东师范大学物理系,上海200062 [2]华东师范大学电子系,上海200062

出　　处：《压电与声光》2006年第6期680-682,685,共4页Piezoelectrics & Acoustooptics

基　　金：上海市科委纳米专项研究计划基金资助项目(批准号0352nm077);国家自然科学基金资助项目(60306002)

摘　　要：采用射频磁控溅射制备了具有(100)择优取向的赝立方钙钛矿结构的LaNiO3-x薄膜,并对薄膜在265℃的衬底温度下进行了原位热处理。测试结果表明薄膜具有金属导电性,薄膜中晶粒大小约为10 nm,并且热处理对薄膜的结构没有影响。同时,随着热处理时间延长,薄膜晶格的含氧量、电导率、光学折射率以及消光系数都将逐步降低。该文采用经典电磁理论,通过计算机模拟成功解释了这些实验结果和证明了以前给出的理论解释。此外,数值模拟和实验结果同时表明在纯氩气氛中溅射制备的LaNiO3薄膜晶格中存在氧空位,为了提高电导率,溅射时的氧气比例应超过20%。Metallic conductive LaNiO3-x films with pseudo cubic （100） preferred orientation are prepared hy RF magnetron sputtering and in situ annealed at 265℃. The experiment results indicate that the grains are of a uniform size,about 10nm, the lattice oxygen concentration and the electric eonduetivity of the films decrease near-exponen tially as annealing time increases. A reasonable explanation is provided and verified by a computational simulation u sing the classical electromagnetic theory. Both the simulation and the experimental resuhs illustrate that the films RF-spt, ttered only in argon are of lattice oxygen inefficency. In order to improve the electrical conductivity, the ox- ygen partial pressure should be over 2054.

关 键 词：导电氧化物 LANIO3 品格氧 

分 类 号：TM223[一般工业技术—材料科学与工程]