半导体锗硅薄膜材料及相关工艺技术  

Semiconductor SiGe Thin Films and the Related Technologies

作　　者：王光伟[1] 

机构地区：[1]天津工程师范大学电子工程系,天津300222

出　　处：《半导体技术》2006年第12期881-886,891,共7页Semiconductor Technology

基　　金：天津市高校科技发展基金资助项目(JW20051201)

摘　　要：综述了锗硅薄膜材料的特性与应用、制备技术、固相结晶、与过渡金属的固相反应等一系列内容,探讨了提高锗硅薄膜结晶度的工艺手段和各自的优缺点,分析了锗硅薄膜与钴等过渡金属固相反应的特点及在集成电路上的应用。The characteristics and applications of the SiGe film, fabrication process, solid-phase crystallization and solid state reaction with transition metals were summarized. The crystalinity enhancement techniques of the SiGe thin film and their respective advantages as well as disadvantages were discussed. And the reaction specialty with different transition metals such as cobalt, and the applications in IC were analyzed.

关 键 词：锗硅 薄膜材料 固相结晶 固相反应 集成电路 

分 类 号：TN304.055[电子电信—物理电子学]