聚合单体对制备SiO_x高阻隔性薄膜性能的影响  

Influence of SiO_x Polymerization on the Obstructing Performance

作　　者：周美丽[1] 陈强[1] 岳蕾[1] 葛袁静[1] 

机构地区：[1]北京印刷学院,北京102600

出　　处：《包装工程》2006年第6期37-39,共3页Packaging Engineering

基　　金：北京市教委基金(KW200500001);北京印刷学院引进人才基金

摘　　要：论述在食品包装保质保鲜方面,对普通包装基材PET、BOPP等表面采用等离子体化学气沉积一层纳米级透明的SiOx层高阻隔层。实验采用13.56MHz的射频等离子体装置,分别以四甲基二硅氧烷(TMDSO)和六甲基二硅氧烷(HMDSO)为单体、氧气为反应气体、氩气为电离气体,在载玻片、单晶硅片、PET、BOPP等包装基材上沉积硅氧阻隔膜。比较了不同单体在制备氧化硅阻隔膜时各种工艺参数影响。通过傅立叶红外谱仪(FTIR)分析,扫描电子显微镜(SEM)表征,研究沉积膜的化学组成和结合状态;采用透湿测试仪测试薄膜的透湿性能,研究工艺参数的变化、表面的结构变化、形貌改变等对薄膜的阻隔性能影响原因。The characterization of silicon oxide （SiO2） films on PET substrates by plasma-enhanced chemical vapor deposition was investigated for transparent barrier application. The films were prepared by interelectrode capaeitively coupled type apparatus and on conditions with carrier gas Ar2, O2 and monomer 1,1,3,3-tetramethyldisiloxane （TMDSO） or hexamethyldisiloxane （HMDSO）, by discharge frequency of 13.56. Compared with the different monomer, the film properties, such as compose and structure, roughness, water vapor transmission rate （WVTR） and oxygen transmission rate （OTR） are difference with the oxygen content and power value. The characteristics of thin films were investigated through Fourier transform infrared adsorption spectroscopy （FTIR） and scan electron microscope （SEM）.

关 键 词：PECVD 四甲基二硅氧烷(TMDSO) 六甲基二硅氧烷(HMDSO) 高阻隔性薄膜 

分 类 号：TB484.3[一般工业技术—包装工程]