退火条件对氧化钒薄膜微观结构的影响  

Influence of Annealing Conditions on Microstructure of Vanadium Oxide Thin Films

作　　者：梁继然[1] 胡明[1] 吕宇强[1] 韩雷[1] 刘志刚[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《天津大学学报》2006年第12期1495-1498,共4页Journal of Tianjin University(Science and Technology)

基　　金：天津市自然科学基金资助项目(043600811)

摘　　要：采用直流对向靶磁控溅射的方法在S iO2/S i衬底上制备了具有(001)择优取向的V2O5薄膜,利用X射线衍射、场发射扫描电子显微镜和四探针测试方法对退火前后薄膜的表面形貌、物相组分和电阻温度系数进行了测量.结果表明:200℃衬底温度下溅射得到的薄膜为多晶V2O5,膜表面颗粒呈细长针状,经700℃、1 h退火后,薄膜中VO2相成分增多,颗粒变为长方形柱状;退火后薄膜的电阻温度系数达到-3.200//K,与薄膜的微结构和物相组分有很大关系;3 h退火后,得到高纯度的V2O5薄膜.To study the influence of annealing conditions on microstructure of VOx thin films, V2O5 thin films with a preferred （001） orientation were deposited on SiO2/Si substrate by reactive direct current facing targets magnetron sputtering. X-ray diffraction technique, field emission scanning electron microscope and four-pointprobe method were employed to investigate the morphology, phase composition and temperature eoefficient of resistance（TCR） of the thin films. The results show that the film obtained at 200 ℃ substrate temperature is polyerystalline V2O5 , whose crystalline is needle-like, the phase of VO2 increases after annealing at 700 ℃ for 1 h and the crystalline changes its shape to rectangle eohlmn. The TCR reaches up to - 3.2%/K after annealing, which is related to the microstructure and phase in the thin film. After annealing tbr 3 h, V2O5 thin films with high purity are obtained.

关 键 词：氧化钒薄膜 微观结构 直流磁控溅射 择优取向 

分 类 号：O484[理学—固体物理]