一种低温漂低电源电压调整率CMOS基准电流源  

A Novel CMOS Current Reference with Low Temperature and Supply Dependence

作　　者：刘国庆[1] 于奇[1] 刘源[1] 宁宁[1] 何波[1] 罗静芳[1] 杨谟华[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《微电子学》2006年第6期763-766,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60072004)

摘　　要：通过对带隙基准电路零温漂点设置的开发，获取负温系数电压，实现负温系数电流获取新方法，发展令PMOSFET源栅电压与阈值电压的电源电压变化率相消，从而优化电源电压调整率的新概念，提出了一种CMOS基准电流源新方案。源于SMIC 0．35μm CMOS工艺模型。Cadence Hspice模拟验证结果表明，在-40-85℃温度范围内，温度系数为6．9ppm／℃；3．0～3．6V电压区间，电源电压调整率系10．6ppm／V，低于目前文献报道的基准电流源相应指标。该新方案已经用于10位100MSPSA／D转换器的研究设计，并可望应用于高精度模拟／混合信号系统的开发。A new CMOS current reference solution is presented by creating a new negative temperature coefficient current resulted from negative temperature coefficient voltage, which is generated in the bandgap circuit whose zero temperature coefficient point is specially configured, and proposing low line regulation mechanism, which is realized by compensating variations of source-to-gate voltage and threshold voltage versus supply voltages. Results from simulation in HSPICE based on SMIC＇ s 0. 35 μm CMOS process model indicate that the current reference has a temper ature coefficient of 6. 9 ppm/℃ over the temperature range from -40 ℃ to 85 ℃ and a line regulation of 10. 6 ppm/ V for a supply voltage from 3.0 to 3. 6 V, which are much lower than those reported in the literatures. The new solution has been implemented into a 10-bit 100 MSample/s A/D converter.

关 键 词：CMOS基准电流源 负温系数电流 低温漂 低电源电压调整率 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]