利用二次离子质谱法对氢在SiC-C涂层中热稳定性的研究  

Study in Thermal Stability of Hydrogen in SiC-C Films by Sexondary ion Mass Spectrum Method

作　　者：张瑞谦[1] 任丁[1] 黄宁康[1] 曾俊辉[2] 杜良[2] 张东[2] 王春芬[3] 

机构地区：[1]四川大学原子核科学技术研究所.教育部辐射物理和技术重点实验室,成都610064 [2]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [3]洛阳船舶材料研究所,河南洛阳471039

出　　处：《四川大学学报（自然科学版）》2006年第6期1322-1326,共5页Journal of Sichuan University(Natural Science Edition)

摘　　要：利用Ar+离子束轰击混合沉积技术(ion beam mixing)在不锈钢基体上制备在不锈钢和碳钢基体上沉积SiC-C涂层,并然后对样品进行加后热处理热去氩处理(400℃/30min),再用5keV的氢离子辐照样品.最后对部分氢离子辐照后的样品进行加热处理(300℃/20min,600℃/20min,900℃/20min),以观察氢在SiC-C涂层中的热稳定性.通过和二次离子质谱仪(SIMS)H元素深度分布和正离子质谱分析,研究氢元素在SiC-C涂层中和在不同基团中的热稳定性后热处理.结果表明,在300℃高温条件下在SiC-C涂层中的氢含量下降不多;随着温度的升高,600℃时氢含量已有明显下降;900℃时氢已从SiC-C涂层中逃逸.SiC-C films were deposited on the surface of stainless steel using ion beam mixing. In order to eliminate argon, rome of the samples were heat-treated for 20 min in 400℃ before they were irradiated by a 5keV hydrogen ion beam. After hydrogen implantation, some of samples were heated to 300℃,600℃ and 900℃ for 20 min, respeetively. SIMS was used to study the depth distribution of H and to give the mass speetra of positive species in the samples. IR was used to study the mechanism of hydrogen retention in the SiC-C films. The results show that hydrogen in SiC-C films was still stable after 300℃ heating. The hydrogen concentration becomes lower with increasing temperature and hydrogen was totally escaped at 900℃.

关 键 词：SiC-C涂层 阻氢 去氩后热处理SIMS 热稳定性 

分 类 号：TB43[一般工业技术]