内建电场对纤锌矿In_xGa_(1-x)N/GaN单量子点光学特性的影响  

Influence of the Built-in Electric Field on Optical Properties in Single In_(x)Ga_(1-x)N/GaN Quantum Dots

作　　者：赵旭[1] 危书义[1] 夏从新[1] 吴花蕊[1] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007

出　　处：《河南师范大学学报（自然科学版）》2006年第4期55-58,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60476047);河南省自然科学基金资助项目(0611053800)

摘　　要：利用有效质量近似和变分原理,考虑量子点的三维约束效应,对柱形量子点光学特性在有无内建电场时随量子点结构参数的变化进行研究.结果表明:内建电场对量子点的发光波长和激子基态振子强度等光学性质有重要的影响,其中量子点高度的变化对量子点光学特性的影响要比量子点半径的变化对量子点光学特性的影响更明显.Based on the framework of effective-mass approximation and variational approach, the optical properties are investigated theoretically in self-formed wurtzite InxGa1-xN/GaN quantum dots. Considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization, the emission wavelength and the oscillator strength are calculated as functions of the different structural parameters （the height L and the radial R） with and without the built-in electric field in detail. The results elucidate that the strong built in electric field has a significant influence on optical properties of InxGa1-xN/GaN quantum dots. The influence of the height of quantum dot on optical properties is more than the radial of quantum dot.

关 键 词：量子点 内建电场 振子强度 

分 类 号：O472.3[理学—半导体物理]