A Super-Low-Noise,High-Gain MMIC LNA  

一种极低噪声高增益微波单片低噪声放大器(英文)

作　　者：黄华[1] 张海英[1] 杨浩[1] 尹军舰[1] 朱旻[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2006年第12期2080-2084,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60276021);国家重点基础研究发展规划(批准号:G2002CB311901)资助项目~~

摘　　要：A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit size, and shows a 5012 noise figure less than 0.9dB, gain greater than 26dB, and return loss less than - 10dB in the S-C band range of 3.5 to 4. 3GHz. The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range. It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.报道了一种用于卫星通讯系统，基于0．5μm栅长增强型赝配高电子迁移率晶体管的两级级联微波单片低噪声放大器．采用集总参数元件来缩小电路面积进而在整个芯片内完成阻抗匹配．在500端口测试条件下，该低噪声放大器在3．5～4．3GHz频率范围内，噪声系数小于0．9dB，增益大于26dB，回波损耗小于一10dB、这是至今为止报道的增益高于20dB的低噪声放大器中具有最小噪声系数的微波单片低噪声放大器，它主要归因于采用具有优异噪声性能的增强型腰配高电子迁移率晶体管以及本文提出的源极串联电感结合漏极应用一个小的稳定电阻来减小输入匹配网络寄生电阻的电路结构．

关 键 词：low noise amplifier enhancement PHEMT MMIC 

分 类 号：TN722.3[电子电信—电路与系统]