A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor  

高性能硅基MOS电光相位调制器(英文)

作　　者：黄北举[1] 陈弘达[1] 刘金彬[1] 顾明[1] 刘海军[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2006年第12期2089-2093,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60536030,60502005);国家高技术研究发展计划(批准号:2005AA311030)资助项目~~

摘　　要：We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.提出了一种SOI新型MOS电容型电光调制器.与普通单一电容型MOS调制器相比,由三层栅氧化层形成的新型MOS电容型调制器提高了调制效率.模拟显示,调制电压和调制长度乘积为VπLπ=2·4V·cm,上升和下降时间分别为80和40ps ,带宽达到了8GHz .通过减小器件尺寸能进一步提高调制效率和调制速度.

关 键 词：carrier accumulation plasma dispersion effect electro-optic phase modulator METAL-OXIDE-SEMICONDUCTOR optoelectronic integrated circuit 

分 类 号：TN761[电子电信—电路与系统]