ZAO薄膜使用射频溅射法生长之参数的研究  

Study of ZAO thin films process parameter by RF magnetron sputtering

作　　者：耿茜[1] 汪建华[1] 王升高[1] 

机构地区：[1]武汉工程大学等离子体化学与新材料重点实验室,湖北武汉430073

出　　处：《应用化工》2006年第12期910-912,917,共4页Applied Chemical Industry

基　　金：湖北省科技攻关计划(2002AA105A02);湖北省高等学校优秀中青年科技创新团队资助计划项目

摘　　要：以氧化铝锌陶瓷为溅射靶材,在氩气环境下,使用射频溅射法在玻璃基片上制备氧化铝锌(ZAO)薄膜。通过调节气体压强、基片温度、溅射功率制膜,得到以C轴(002)为选择取向的氧化锌薄膜。由XRD、原子力显微镜(AFM)等对薄膜进行分析。结果表明,制备薄膜的最佳条件为:溅射压强0.4 Pa,溅射功率200 W,基片温度300℃。ZAO Films were deposited on glass substrates by using R. F magnetron sputtering from ZAO target under argon conditions. The work pressure, R, F power, and the temperate of substrate were investigated to acquire ZAO（002） films. Analysed the ZAO film with XRD and AFM ,the results showed that the best condition of ZAO thin film obtained are as follows： work pressure is 0.4 Pa, R. F power is 200 W and the temperature of substrate is 300℃ .

关 键 词：ZAO陶瓷靶材 ZAO薄膜 RF溅射 XRD 原子力显微镜 

分 类 号：TB381[一般工业技术—材料科学与工程] TB321