Si_3N_4-SiO_2复合材料的制备及介电性能研究  

Research on the Dielectric Properties of Composite Made with Si_3N_4-SiO_2

作　　者：黄学辉[1] 彭凡[1] 阎发强[1] 唐辉[1] 

机构地区：[1]武汉理工大学材料科学与工程学院,武汉430070

出　　处：《武汉理工大学学报》2006年第12期21-23,共3页Journal of Wuhan University of Technology

摘　　要：以国产氮化硅、二氧化硅粉为原料,以氧化镁、氧化铝为烧结助剂,经干压成型后,在流动的高纯N2作为控制气氛的条件下,常压烧结出结构均匀,具有良好介电性能的Si3N4-SiO2复合材料。研究了原料、烧结温度、烧结助剂对材料介电性能的影响。结果表明:SiO2、MgO、Al2O3可促进坯体的烧结及致密,同时对材料的介电性能有较大的影响。当烧结温度低于1 550℃时,随着烧结温度的升高,材料的介电常数趋于增大。当烧结温度高于1 550℃时,随着温度的升高,材料中缺陷增加,相对密度降低,因此材料的介电常数趋于减小。Materials with uniform structure and excellent dielectric properties were prepared, taking home-made Si3N4, SiO2 powder as raw material and sintering the green bodies under flowing pure nitrogen after casting. The influences of purity of the raw material, sintering temperature on dielectric properties of sintered bodies were studied. It is suggested that SiO2, MgO, Al2O3 exists in the feed may promote the sintering, and it also seriously affect dielectric properties. The dielectric constant increases with the increasing of sintering temperature below 1 550 ℃. Macroscopic defect increases and relative density and dielectric constant reduce gradually at the temperature above 1 550 ℃.

关 键 词：氮化硅 烧结助荆 烧结温度 介电性能 

分 类 号：TQ050.42[化学工程]