利用MSOS电容器测量a-Si:H薄膜的厚度  

Using MSOS Capacitor to Measure Thickness of a-Si:H Thin Film

作　　者：龚道本[1] 

机构地区：[1]中南民族学院物理系

出　　处：《中南民族学院学报（自然科学版）》1996年第3期18-21,共4页Journal of South-Central University for Nationalities(Natural Sciences)

摘　　要：由金属-非晶态半导体-氧化物-半导体等4层结构组成的MSOS电容器,它的正向偏压C-V特性曲线有一个电容的最小值C_min,它反映了a-Si:H薄膜的厚度d_(?),提出了一种新的测量a-Si:H簿膜厚度的方法——电容测厚法,它有如下优点:①测量数据可靠;②精度较高,可达±8nm;③测量范围较大。A kind of capacitor with four layer structures which consists of Metall-amorphous Semiconductor-Oxide-Semiconductor for short as MSOS capacitor. Its C-V characteristic curve has a minimums Cmin. The minimum Cmin of capacitor represents thickness da of a-Si:H film.The measurement of the thickness da of a-Si:H film always was difficulty. Else may measure by interference microscope, but the region and accuracy of its measurement is restricted. This paper has presented capacitance measurement thickness method which have following advantage:①easurement datum is reliable;②he accuracy is higth;③the measurement region is big.

关 键 词：MSOS电容器 半导体 薄膜 厚度 测量 硅 

分 类 号：TN304.12[电子电信—物理电子学]