掺杂剂种类对大直径直拉硅单晶中void微缺陷的影响  

Influence of Dopant on Void Defects in Large-diameter CZSi Crystal

作　　者：郝秋艳[1] 孙文秀[2] 刘彩池[2] 张建强[2] 姚素英[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]河北工业大学材料学院,天津300130

出　　处：《南开大学学报（自然科学版）》2006年第6期64-67,共4页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：河北省自然科学基金(E2005000057);天津市自然科学基金(043602511);河北省教育厅基金(2004311)

摘　　要：研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响.实验结果发现,掺入半径较大杂质原子的硅片,空洞型微缺陷密度相对较高,掺入半径较小杂质原子的硅片,空洞型微缺陷的密度相对较低.高温快速热处理后,硅片中FPD s的密度都有很大程度降低,而A r气氛退火对vo id微缺陷密度的影响要优于N2气氛.轻掺B硅片在O2气氛退火后FPD s密度下降最多,而重掺Sb硅片在O2气氛退火后FPD s密度下降最少.The relationship between the density of the void defects in large-diameter CZSi crystal and dopant was investigaged. The void defects density is higher when doping bigger impurity, but doping smaller impurity will reduce them. After rapid thermal annealing （RTA） in Ar atmosphera at high temperature, the flow pattern defects （FPDs） density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers. In addition, the FPDs density in lightly B-doped wafer after RTA decreased more in O2 than that in Ar, but the opposite rersults were got in the heavily Sb-doped wafer.

关 键 词：CZSI 空洞型微缺陷 FPDS 快速热处理 

分 类 号：TN304.01[电子电信—物理电子学]