SOI压力传感器封装工艺研究  

Research on SOI Pressure Sensor Packaging Process

作　　者：关荣锋[1] 赵军良[1] 刘树杰[1] 

机构地区：[1]河南理工大学材料科学与工程学院,河南焦作454003

出　　处：《河南理工大学学报（自然科学版）》2006年第6期497-501,共5页Journal of Henan Polytechnic University（Natural Science）

基　　金：国家"863"项目MEMS重大专项支持(2004AA404221)

摘　　要：针对高温环境下各种气体和液体压力的测量要求,应用微机电系统技术研制了一种新型的SOI(Silicon on Insulator)压力传感器,并设计了一种耐高温的封装结构.采用有限元方法详细地分析了贴片材料对传感器灵敏度、应力分布及可靠性的影响.分析数据表明,贴片材料的杨氏模量和厚度对传感器的灵敏度和可靠性有较大影响,合理选择贴片材料可优化传感器性能.在分析的几种焊接材料中,AuSn焊料是一种性能优良的焊接材料,比较适合用于SOI耐高温压力传感器的封装工艺中.通过对研制压力传感器样品性能的测试,结果表明:该传感器测量精度达0.5%,测量压力量程为30 MPa,测量介质温度为200℃.Aimmy at pressure measuring requirement of gas and liquid in high temperature environment, a new type of SOI （Silicon on Insulator） pressure sensitive chip is fabricated, and a packaging structure of resistance high temperature for the chip is designed. The effects of bonding material on sensor＇ s sisitivity , stress distrabution in chip and relibility of die bonding are analyzed in detail by applied finite element methed, and an optimizing technique is proposed. The results illuminate that Yangshi modul and thickness of die bonding materials have a bigger influence on sensistivity and reliability of sensor. The sensor＇s properties can be optimized by correct selecting die material. AuSn solder in several die bonding material analyzed is a better die bonding material, is more suited for SOI pressure sensor packaging. The testing results of the packaging samples show that the sensor can achieve the prceision of 0.5 %, the pressure range of 30 Mpa, and temperature of medium is 200℃.

关 键 词：SOI压力传感器 封装 贴片工艺 有限元分析 

分 类 号：TM38[电气工程—电机] TP212.11[自动化与计算机技术—检测技术与自动化装置]