AlSiC电子封装基片的制备与性能  

Fabrication and property of aluminum silicon carbide electronic packaging baseplates

作　　者：熊德赣[1] 刘希从[1] 鲍小恒[1] 白书欣[1] 杨盛良[1] 赵恂[1] 

机构地区：[1]国防科技大学航天与材料工程学院,长沙410073

出　　处：《中国有色金属学报》2006年第11期1913-1917,共5页The Chinese Journal of Nonferrous Metals

摘　　要：采用模压成形制备SiC预制件和真空压力浸渗相结合的技术，成功制备出AISiC电子封装基片。研究磷酸铝含量和成形压力对SiC预制件抗弯强度和孔隙率的影响规律，并对所制备的AISiC电子封装基片的性能进行评价。结果表明，在磷酸铝含量为0．8%，成形压力为200MPa时，经600℃恒温2h处理的SiC预制件抗弯强度为8．46MPa，孔隙率为37％。当温度为100～500℃时，AISiC电子封装基片的热膨胀系数介于6．88×10^-6和8．14×10^-6℃^-1之间，热导率为170W／（m·K），抗弯强度为398MPa，气密性小于1×10^-8Pa·m^3／s。用钯盐活化进行化学镀镍，得到光亮、完整的镀层。镀层于450℃恒温120s后，镀层不变色，未见起皮和鼓泡。The aluminum silicon carbide electronic packaging baseplates were produced successfully by combination of compression molding for SiC preform and vacuum pressure infiltration. The effects of amount of aluminum phosphate and molding pressure on porosity and strength of SiC preform were investigated, and the properties of AISiC electronic packaging baseplates were also evaluated. The results show that the bending strength and porosity of SiC perform dried at 600℃ for 2 h are 8.46 MPa and 37%, respectively, when the content of aluminum phosphate is 0. 8% and the molding pressure is 200 MPa. The coefficient of thermal expansion of AISiC electronic packaging baseplates ranges from 6.88 × 10^-6 to 8. 14 × 10^-6 ℃ 1 at the temperatures of 100 - 500 ℃, the thermal conductivity is 170 W/（m·K）, the bending strength is 398 MPa and the hermeticity is less than 1 × 10^-8 Pa · m^3/s. The electroless nickel was processed by utilizing palladium chloride as activator. The plating layer with bright, smooth and continuous surface has good adhesion when it is exposed at 450 ℃ for 120 s.

关 键 词：AISiC电子封装基片 气密性 真空压力浸渗 化学镀镍 

分 类 号：TG146[一般工业技术—材料科学与工程]