以有源电感为负载的CMOS宽带LNA设计  

CMOS Broadband Low Noise Amplifier with an Unbalanced Active Inductor

作　　者：刘文用[1] 陈迪平[1] 陈弈星[1] 王镇道[1] 

机构地区：[1]湖南大学物理与微电子科学学院,410082

出　　处：《微计算机信息》2006年第12Z期248-250,共3页Control & Automation

摘　　要：本文设计了一个基于数字CMOS工艺的以有源电感为负载的宽带低噪声放大器,其中包括了级联型有源电感的优化设计。电路采用共栅结构,用HSPICE进行仿真优化,模拟结果表明电路工作良好,S21达到10dB,电压增益为17dB,满足增益要求;在3dB带宽内,S11在-12￣-17dB之间,完全符合一般通信系统S11<-10dB的要求;NF在3.6至4.9之间。通带的反向隔离良好,大于40dB,S22亦在-14dB以下。A broadband low noise amplifier （LNA） with an unbalanced active inductor load using digital CMOS technology is presented. The optimal design of this unbalanced active inductor for specific cases is also discussed. A common gate structure is employed to improve the broadband performance. HSPICE simulation is performed for the designed LNA. It is shown that this LNA has （i） a power gain of 10 dB （S21） and a voltage gain of 17 dB, which are quite sufficient for a practical LNA, （ii） Sll between -12- -17 dB in the 3 dB bandwidth, which meets the below -10dB requirement for the most communication systems, （iii） S12 less than -40 dB, which ensures a good isolation,（iv） S22 below -14 dB, and （v） a noise figure （NF） between 3.6-4.9 dB, which is quite good for a broadband LNA. The power consumption is 20mW.

关 键 词：有源电感 CMOS 宽带低噪声放大器 

分 类 号：TN722[电子电信—电路与系统]