超声喷雾热解法生长氧化锌同质p-n结及其电致发光性能研究  

Fabrication of ZnO p-n Homojunction by Ultrasonic Spray Pyrolysis and Its Electroluminescence Properties

作　　者：边继明[1] 刘维峰[1] 胡礼中[1] 梁红伟[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室及物理与光电工程学院,大连116024

出　　处：《无机材料学报》2007年第1期173-175,共3页Journal of Inorganic Materials

基　　金：大连理工大学青年教师培养基金;国家自然科学基金(50532080;60576054)

摘　　要：采用超声喷雾热解法在单晶GaAs(100)衬底上生长ZnO同质p-n结．以醋酸锌水溶液为前驱体,分别以醋酸铵和硝酸铟为氮(N)源和铟(In)源,通过氮-铟(N-In)共掺杂沉积p型ZnO薄膜,以未故意掺杂的ZnO薄膜做为n型层获得ZnO基同质p-n结．采用热蒸发工艺在ZnO层和GaAs衬底上分别蒸镀Zn／Au和Au／Ge／Ni电极而获得发光二极管原型器件,在室温下发现了该器件正向电流注入下的连续发光现象．ZnO has recently become a very popular material due to its great potential for optoelectronics applications. To realize practical application of short-wavelength optoelectronic devices （such as LEDs and LDs） based on ZnO materials, electroluminescence （EL） from ZnO p-n homo junction is pivotal. In this article, ZnO homo junction was grown on single-crystal GaAs （100） substrate by ultrasonic spray pyrolysis with Zn（CH3COO）2-2H2O as precursor solution. CH3COONH4 and In（NO3）3 aqueous solutions were chosen as the doping sources of nitrogen and indium respectively. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact layers on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrode respectively. Moreover, light emission was observed under forward current injection at room temperature, the emission could be clearly seen by the naked eye in a darkened room. With the demonstrated success of electroluminescence from ZnO p-n homojunction at room temperature, the application of short-wavelength optoelectronic devices based on ZnO materials should be possible in the near future.

关 键 词：ZNO薄膜 同质p-n结 电致发光 超声喷雾热分解 

分 类 号：TN957[电子电信—信号与信息处理]