TSOP封装脱模中硅片碎裂失效的有限元分析(英文)  

Analysis of TSOP Si Die Crack Issue in Mould Release Step by Finite Element Method

作　　者：杨震宇[1] 王明湘[1] 许华平[1] 

机构地区：[1]苏州大学微电子学系,江苏苏州215021

出　　处：《半导体技术》2007年第1期68-73,共6页Semiconductor Technology

基　　金：Supported by National Natural Science Foundation of China(60406001)

摘　　要：针对TSOP封装在塑封工艺中脱模时可能发生的芯片碎裂,利用有限元法模拟封装脱模过程阐明了芯片碎裂失效的机制。研究表明,模具内表面有机物形成的局部沾污可能阻碍芯片的顺利脱模,导致硅片内产生较大的局部应力并碎裂失效。通过模拟在不同的沾污面积、形状和位置下的封装脱模,确认了最可能导致失效的条件。芯片碎裂失效可以通过使用高弹性模量的塑封料或减小硅片尺寸得以改善。During molding process, Si die crack failures might occur in some types of thin small outline package （TSOP） at mould release step. This step was simulated by finite element method to clarify the mechanism of Si die crack failures. It is demonstrated that some adhesion area by organic contamination on mould .inner surface, may impede package block from being smoothly released from the mould, leading to locally built high internal stress within Si and causing die crack. Die crack risks with adhesion area in different sizes, shapes and positions were compared. High-risk conditions were defined. Die crack failure could be reduced using high elastic molding compound, and be reduced in small Si die package.

关 键 词：硅片碎裂 有限元分析 塑封 应力 可靠性 

分 类 号：TN305.94[电子电信—物理电子学]