添加剂对Cu/Co多层膜电结晶成核机理及磁性的影响  

Effect of Additives on Mechanism of Nucleation and Magnetic Property of Cu/Co Multilayers

作　　者：曹为民[1] 石新红[1] 印仁和[1] 姬学彬[1] 张磊[1] 曹赟[1] 

机构地区：[1]上海大学理学院化学系,上海200444

出　　处：《电镀与精饰》2007年第1期1-4,26,共5页Plating & Finishing

基　　金：国家自然科学基金(20271062);上海市教委青年基金(02AQ83)资助项目

摘　　要：在硼酸镀液中以单晶S i(111)为基底用双槽法制备Cu/Co多层膜,在镀液中分别加入了镀铜添加剂2000#和镀钴添加剂5#。探讨了镀层电结晶成核机理,在基础镀液中铜电结晶为三维连续成核过程,钴电结晶在较低电位下为三维连续成核,在较高电位下为三维瞬时成核过程。加入添加剂后,铜、钴电结晶均为三维瞬时成核过程。测试了Cu/Co多层膜的磁性能;添加剂能提高多层膜的磁性能,无添加剂的Cu/Co多层膜的巨磁阻(GMR)值约为5%,而在加入了添加剂后,其GMR值高达52%。Cu/Co multilayers were prepared on monocrystalline silicon （111） by using double-bath method in boric acid solution with additives added. The effects of additives on Cu/Co multilayers and the mechanism of nucleation were studied. The experiment results show that the growth kinetics for Cu is consistent with progressive nucleation. And for Co, there is a transition from progressive to instantaneous nucleation at about 1.2 V. In addition, GMR values were measured by PPMS at room temperature. The results show that： Additives can enormously improve the magnetism of the multilayers. GMR value of Cu/Co multilayers without additives was only about 5%. While with additives, the GMR value was up to 52%.

关 键 词：电结晶 Cu/Co多层膜 成核 巨磁阻效应 

分 类 号：TQ153[化学工程—电化学工业]