电荷直接隧穿特征时间的计算模型  

Characteristic Time of Direct Charge Tunneling in a Silicon Nanocrystal Based Memory

作　　者：杨红官[1] 李晓阳[1] 刘全慧[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《计算物理》2007年第1期71-77,共7页Chinese Journal of Computational Physics

基　　金：湖南省青年骨干教师项目;湖南大学自然科学基金(521105008)资助项目

摘　　要：在分析硅基纳米存储器的势结构和价带混合效应对直接隧穿过程影响的基础上,采用顺序隧穿理论和巴丁传输哈密顿方法,发展了电子和空穴直接隧穿时间的计算模型.利用该模型数值计算了硅基纳米存储器的编程时间和保留时间,讨论了结构参数和外加偏压对器件存储性能的影响,指出需要设计新的器件结构模型来优化硅基纳米存储器的保留特性.Considering potential configuration of a silicon nanocrystal based memory and the mixing effect of valence bands, we calculate direct tunneling time of electron and hole with sequential tunnel theory and in the Bardeen＇s transfer Hamiltonian formalism. The programming and retention times of a silicon nanoerystal based memory are calculated. Influences of structure and bias on the performance of device are discussed. It is shown that new devices are expected in order to improve the retention property of silicon nanocrystal based memories.

关 键 词：直接隧穿 传输哈密顿方法 纳米存储器 

分 类 号：O411.9[理学—理论物理]