纳米级BiCMOS双极架构的可制造性设计  

Design for Manufacturability of the Nanometer Level BiCMOS Bipolar Framework

作　　者：刘岩[1] 侯志刚[1] 李惠军[1] 

机构地区：[1]山东大学孟尧微电子研发中心,济南250100

出　　处：《微纳电子技术》2007年第1期11-14,42,共5页Micronanoelectronic Technology

摘　　要：基于对小尺寸双极性器件特性的理论分析,对合理实现BiCMOS的架构模式进行了深入研究,完成了TSUPREM-Ⅳ与MEDICI接口的TCAD可制造性设计流程,实现了BiCMOS环境下集成化小尺寸器件管芯制程的全流程虚拟制造。器件基区宽度小于100nm,器件特性理想。Based on the theoretical analysis of small-scale bipolar devices, the in-depth research on reasonably achieving BiCMOS framework was conducted. The TCAD design flow for manufacturability was completed through interoperation of TSUPREM-Ⅳand MEDICI. The virtual manufacturing of full flow for integrated small-scale device under BiCMOS structure was achieved, The base width of the device is shorter than 100 nm and the characteristics are ideal.

关 键 词：双极性器件 工艺级设计 可制造性设计 

分 类 号：TN433[电子电信—微电子学与固体电子学]