生长在In_xGa_（1－x）As（001）衬底上应变薄层GaAs的电子能带结构  

Electronic Band Structures of Coherently Strained Layer GaAs on InxGa1-xAs (001) Substrates

作　　者：徐至中[1] 张勃[1] 

机构地区：[1]复旦大学物理系

出　　处：《固体电子学研究与进展》1996年第4期309-313,共5页Research & Progress of SSE

基　　金：国家自然科学基金

摘　　要：采用经验的紧束缚方法对生长在ＩｎｘＧａ１－ｘＡｓ（００１）衬底上的应变薄层ＧａＡｓ的电子能带结构进行了计算。应变对能带结构的影响按标度定则进行计算，其中标度指数根据对畸变势常数的实验值进行拟合而确定。给出了ＧａＡｓ／ＩｎｘＧａ１－ｘＡｓ（００１）能带结构随衬底合金组分ｘ的变化关系，讨论了应变对能带色散关系的影响。Electronic band structures of coherently strained layer GaAs grown on In.Ga, InxGa1-x As (001) substrates are calculated with an empirical tight-binding method. The empirical scaling rule has been used for considering the effects of the strains on the energy band structures, in which the-scaling index is determined through fitting the deformation potentials with thier experimental values. The energy gaps and the valence band structures of GaAs/InxGa1-xAs (001) as a function of the alloy composition x are given and the effects of the strains on the energy band dispersions are discussed.

关 键 词：电子能带结构 外延生长 半导体 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054