ULSI用氟化类金刚石薄膜的研究  

Study on fluorinated diamond-like carbon films for ULSI

作　　者：肖剑荣[1] 徐慧[1] 简献忠[2] 

机构地区：[1]中南大学物理科学与技术学院 [2]上海理工大学电气与工程学院,上海200093

出　　处：《电子元件与材料》2007年第1期30-32,共3页Electronic Components And Materials

基　　金：湖南省自然科学基金资助项目(05JJ40135)

摘　　要：以CF4和CH4为源气体，用射频等离子体增强化学气相沉积法，制备了氟化类金刚石（F-DLC）薄膜．采用FTIR仪、XPS对样品进行了测试、分析。结果表明，在薄膜内主要含有C-Fx（=1，2，3）、C-C、C-H2、C-H3等以及不饱和C=C化学键；薄膜的εr为2．07-2．65。εr与膜内F的相对浓度有关，随着沉积功率的增大，膜内F、H的含量均降低，εr升高。Fluorinated diamond-like carbon （F-DLC） films were deposited by radio frequency plasma enhance chemical vapor deposition （RF-PECVD） reactor with CF4 and CH4 as source gases. The structural and electrical properties of the films were characterized by FTIR, XPS. The results show that the chemical bonding in the films are mainly C-Fx（x=-1, 2, 3）, C-H2, C-H3, C-C and unsaturated C-C bonding. The films dielectric constant εr ranges from 2.07 to 2.65, and it relates to the content of E When power increases, that is relative contents of H and F cut down, the dielectric constant εr increases.

关 键 词：半导体技术 氟化类金刚石薄膜 沉积功率 介电常数 

分 类 号：TN304.55[电子电信—物理电子学]