半导体Si(111)上电沉积NiFe缓冲层薄膜  

Electrodeposition of NiFe thin films as buffer layers on semiconductor Si(111) substrates

作　　者：姜莹[1] 姚素薇[1] 张卫国[1] 王宏智[1] 

机构地区：[1]天津大学化工学院应用化学系杉山表面技术研究室,天津300072

出　　处：《功能材料》2007年第1期81-84,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50071039;50271046);教育部博士点基金资助项目(20030056034)

摘　　要：采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。由SEM形貌观测分析,当薄膜名义厚度>25nm时,可形成连续性镀层。I-t暂态曲线及STM结果表明,NiFe薄膜在低过电位下以三维岛状模式生长,在高过电位下以二维层状模式生长,其RMS表面粗糙度最小值仅为0.5nm。XRD结果表明,薄膜为面心立方Ni基固溶体结构,并具有明显的(111)晶面择优取向。当薄膜组成为Ni80Fe20时,各向异性磁电阻效应(AMR)最大,AMR值为1.8%。NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si（111） substrates. The electrochemical conditions for Ni80Fe20 permalloy were determined. SEM images showed that the films were continuous with the nominal thickness over 25nm. The results of I-t transient curves and STM characterization revealed that,the growth mode of NiFe films was 3D islands type at low overpotential,and 2D layer-by-layer type at high overpotential. The minimum RMS surface roughness value was only 0.5 nm. XRD result indicated that the film, which was fcc Ni-based solid solution structure, presented an evident （111） preferred orientation. The maximum anisotropy magnetorisistance （AMR） value of 1.8% was obtained with the composition of Ni80 Fe20.

关 键 词：电沉积 NiFe缓冲层 纳米晶 生长模式 AMR 

分 类 号：TB383[一般工业技术—材料科学与工程]