RF磁控溅射制备Al_2O_3薄膜及其介电性能研究  

Dielectric Properties of Alumina Films Prepared by RF Magnetron Sputtering

作　　者：刘红飞[1] 程晓农[1] 徐桂芳[1] 张志萍[1] 付廷波[1] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《材料开发与应用》2007年第1期5-8,共4页Development and Application of Materials

基　　金：国家自然科学基金(50372027;50442023)

摘　　要：以-αAl2O3为靶材,采用射频磁控溅射法制备了非晶Al2O3薄膜。利用X射线衍射仪、扫描电镜、划痕仪、表面粗糙轮廓仪和阻抗仪研究了不同溅射功率和不同溅射气压对薄膜制备的影响,探索了不同溅射功率下制备的Al2O3薄膜的介电常数和介电损耗与频率的关系。试验结果表明,制备的非晶Al2O3薄膜表面平滑致密;随着工作气压的增加,薄膜沉积速率增加;随着溅射功率的增加,Al2O3薄膜的沉积速率和介电常数逐渐增加、介电损耗逐渐减小;随着频率的增加,Al2O3薄膜的介电常数逐渐减小,高频阶段趋于稳定。Amorphous alumina films were prepared by RF magnetron sputtering with the α-Al2O3 as target. The effects of applied RF power and working pressure on the Al203 films were studied by using X-ray diffraction, scanning electron microscopy, scratching adhesion tester and surface profilometer. The relationships between the dielectric properties of Al2O3 films and the applied RF power and the frequency were investigated with impedance analyzer. The results indicate that the surface of the asgrown amorphous alumina thin films is smooth and compact. The dielectric constants and the deposition rate were increased and the dielectric losses were decreased with the increase of the applied RF power. With the increase of the frequency, the dielectric constants at a high frequency become smaller and stable gradually.

关 键 词：AL2O3薄膜 RF磁控溅射 沉积速率 介电损耗 介电常数 

分 类 号：O484.4[理学—固体物理]