量子点阵列光致荧光谱温度依赖性研究  

Temperature dependence of photoluminescence of quantum dot arrays

作　　者：刘国梁[1] 姚江宏[1] 许京军[1] 王占国[2] 

机构地区：[1]天津市南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津市信息光子材料与技术重点实验室,南开大学泰达应用物理学院,天津300457 [2]中国科学院半导体研究所,北京100083

出　　处：《量子电子学报》2007年第1期100-104,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(60476042);长江学者和创新团队发展计划资助

摘　　要：多模量子点阵列的光致荧光(PL)光谱的温度依赖性研究对于实现高效的量子点光电器件有着非常重要的意义．利用速率方程模型模拟不同密度量子点阵列中的载流子动力学过程。研究表明,高密度量子点阵列中不同尺寸量子点族的PL强度表现不同的温度依赖关系;而低密度量子点阵列不同点族PL强度均随温度衰减．高密度量子点阵列中,载流子被热激发到浸润层后,部分地被大量子点再俘获,即在量子点族间转移;低密度量子点阵列中不同量子点族间的载流子转移受到限制．不同量子点族光致荧光强度比的最大值强烈地依赖于量子点的激活能差．The understanding of the temperature dependence of the photoluminescence of multimode quantum dot （.QD） arrays is essentially important for the realization of efficient photonic devices. The dynamics processes of different density multimode QD arrays were fitted by using the rate equation model. It is shown that, in high dense QD arrays, the intensity of photoluminescence of different QD families behaves different temperature dependence; the intensity of photoluminescence is quenched as thetemperature increases in low density QD arrays. In high dense QD arrays, as the temperature increases, the carriers wili be thermally excited into the wetting layer from QDs, and then some of them will be recaptured by the big scale QDs, carriers coupling takes place between the different QD families; in low density / QD arrays, the carriers transfer between different QD families will be limited. Temperature dependence of maximum of the ratio of photoluminescence intensity of different QD families strongly depends on the difference of thermal activation energies.

关 键 词：光电子学 光致荧光 速率方程 多模量子点阵列 热激发 

分 类 号：TN304.2[电子电信—物理电子学] O472.3[理学—半导体物理]