俄歇复合对应变量子阱激光器阂值电流的影响  

Effect of Auger recombination on the threshold current of strained quantum well laser

作　　者：贾国治[1] 姚江宏[1] 刘国梁[1] 柏天国[1] 刘如彬[1] 邢晓东[1] 

机构地区：[1]南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,信息光子材料与技术重点实验室,泰达应用物理学院,天津300457

出　　处：《量子电子学报》2007年第1期105-109,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(60476042);长江学者和创新团队发展计划资助

摘　　要：通过考虑不同因素对压应变和张应变量子阱激光器阈值电流和特征温度的影响,得到了俄歇复合和非俄歇复合对阈值电流起主要作用的转变温度Tc,小于Tc时,主要是非俄歇复合;大于Tc时,主要是俄歇复合,而且张应变量子阱激光器转变温度要比压应变量子阱激光器的转变温度要高;张应变量子阱激光器与压应变量子阱激光器相比,阈值电流更低,特征温度更高．The temperature dependence of threshold current density is calculated by taking the carrier losses （Auger recombination and non-Auger recombination） into account in strained quantum well lasers. The characteristic temperature and threshold current density are compared between tensile-strained quantum well laser and compressive-strained quantum well laser. There is a conversation temperature point （To） between Auger recombination and non-Auger recombination. When T is higher than To, Auger recombination is leading; T is lower than To, the non-Auger recombination is leading. There is a higher conversation tem- perature, a lower threshold current density and a higher characteristic temperature in tensile strained quantum well laser than in compressive-strained quantum well laser.

关 键 词：光电子学 俄歇复合 应变量子阱 阈值电流密度 特征温度 

分 类 号：TN253[电子电信—物理电子学]