脉冲激光沉积法制备ITO薄膜及性质研究  

Preparation and properties of ITO thin film by pulsed laser deposition

作　　者：杨亚军[1] 李清山[1] 刘宪云[1] 

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165

出　　处：《激光杂志》2007年第1期81-82,共2页Laser Journal

基　　金：山东省自然科学基金资助项目(Y2002A09)

摘　　要：本文采用脉冲激光沉积法（PLD）制备了ITO导电薄膜，并对其形貌、光学性质和电学性质进行了研究。结果表明，使用PLD方法制备的ITO导电薄膜在可见光区的平均透光率约为80％，方块电阻在100—200Ω／□之间。当衬底温度控制在300℃，氧压控制在1．33Pa时，可以得到具有较高透光率和电导率的ITO导电薄膜。ITO films were fabricated by pulsed laser deposition（ PLD） method. Structure and optoelectrical properties of the deposited films were investigated. The average optical transmittance was 80% in the visible light range. The sheet resistance was about 100 - 200Ω/□ ITO films which were deposited by PLD at 300℃ and 1.33Pa of oxygen exhibited high optical transparency and conductivity.

关 键 词：脉冲激光沉积 ITO薄膜 透光率 方块电阻 

分 类 号：O484.441[理学—固体物理] O484.42[理学—物理]