6H-SiC NMOS与PMOS温度特性分析  

Analyses of the temperature properties of the 6H-SiC NMOS and PMOS

作　　者：韩茹[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2007年第1期16-20,共5页Journal of Xidian University

基　　金：教育部重点科技项目(02074);国家部委预研项目(513080302)

摘　　要：考虑界面态电荷高斯分布模型以及Poole-Frenkel效应,对SiC MOSFET补偿电流源模型进行了修正,分析了造成6H-SiC NMOS与PMOS器件补偿电流源变化的原因.结果表明:界面态电荷的非均匀分布造成由阈值电压漂移引起的输出漏电流改变量随温度的升高逐渐减小;漏衬界面缺陷是造成体漏电流较大(达到微安量级)的主要因素,且缺陷密度越大,该值随温度增长的速度越快.The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect. The simulation results for the 6H-SiC NMOS and PMOS show that as the non-uniformity distribution of interface state density, the percentage of current change due to the threshold voltage becomes smaller when the temperature is increased, the main reason for the large leakage current is the existence of surface defects. The larger the defect density, the more rapidly the current value increases with the temperature.

关 键 词：碳化硅 补偿电流源 冻析效应 普尔-弗兰克效应 体漏电流 

分 类 号：TN386[电子电信—物理电子学]