高速脊波导激光器寄生电容的分析  

Analysis of parasitic capacitance of high speed ridge waveguide laser

作　　者：孟桂超[1] 陈国鹰[1] 安振峰[2] 张世祖[2] 韩威[1] 

机构地区：[1]河北工业大学信息学院,天津300130 [2]信息产业部电子第13研究所,石家庄050051

出　　处：《激光技术》2007年第1期98-101,共4页Laser Technology

基　　金：国家自然科学基金资助项目(60476025);河北省自然科学基金资助项目(F2005000084603080)

摘　　要：高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。The high-speed modulated semiconductor lasers are the key devices in the system of high-speed fiber communication and phase control radar systems, etc. The parasitic capacitance of the high speed laser is one of those factors which affect the modulation bandwidth. In order to reduce it,the capacitance of the ridge waveguide structure was analyzed and tested, computer simulation was performed. A conclusion is made that capacitance＇s value is related to not only the eroded depth of the insulation channel but also the area of the metallization,which is important for the realization of the high-speed modulation of the laser.

关 键 词：激光器 金属化 腐蚀 寄生电容 调制带宽 

分 类 号：TN248.4[电子电信—物理电子学]