氧离子辅助反应蒸发法制备ITO薄膜的研究  

Study on Ion-Assisted Reactive Evaporated ITO Films

作　　者：何光宗[1] 熊长新[1] 姚细林[1] 

机构地区：[1]华中光电技术研究所,武汉430073

出　　处：《光学与光电技术》2007年第1期71-74,共4页Optics & Optoelectronic Technology

摘　　要：采用氧离子辅助电子束反应蒸发工艺在K9玻璃基底上制备了性能优异的ITO薄膜。通过对薄膜方块电阻和透过率的测量分析，研究了基底温度、离子束流、沉积速率等工艺参数对ITO薄膜光电性能的影响。发现升高基底温度有利于减小薄膜的短波吸收，但过高的基底温度会增加薄膜的电阻率，合适的沉积速率可以同时改善薄膜的光学和电学性能。在比较理想的工艺参数下制备的ITO薄膜的电阻率约为5．4×10^-4Ω·cm，可见光（波长范围425-685nm）平均透过率达84．8％，其光电性能均达到实用化要求。High quality ITO films are prepared onto K9 glass substrates by oxygen ion-assisted electron beam reactive evaporation. Effects of technical parameters, such as substrate temperature, ion flux and deposition rate, on the properties of ITO films are investigated by testing its sheet resistance and transmittance. It is reported that it can reduce the absorption in the short wave band by increasing substrate temperature, but high substrate temperature can increase the resistivity. Both the resistivity and transmittance can be improved by proper deposition rate. The resistivity of the deposited ITO films and the transmittance can suffice the project application with certain technical parameters.

关 键 词：ITO薄膜 氧离子辅助 反应蒸发 

分 类 号：O484.4[理学—固体物理]