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作 者:马书旺[1] 段伯华[1] 高鹏[1] 秦明礼[1] 曲选辉[1] 程彤[1]
机构地区:[1]北京科技大学材料科学与工程学院,北京100083
出 处:《真空电子技术》2006年第4期55-58,共4页Vacuum Electronics
摘 要:以铁粉、镍粉和钴粉为原料,研究了4J32 Invar合金的注射成彤工艺。选择了一种适合4J32 Invar合金注射成形的粘结剂体系。在烧结温度为1350℃,烧结时间为120min,烧结气氛为H2时,烧结样品的致密度达到97.1%。在低于100℃的范围内,烧结样品的膨胀系数小于0.64×10^-6/K,完全符合低膨胀系数的合金的要求:在20~100℃范围内,其热膨胀系数α≤1.8 ×10^- 6/℃.Powder injection molding of 4J32 Invar alloy was studied using powders of Fe, Ni, Co as raw materials and a kind of wax-based polymer was selected as suitable binders for powder injection molding of 4J32 Invat alloy. The relative density reached 97.1% when the sintered temperature was at 1350 ℃, the sintered time was 120 minutes and hydrogen was selected as the sintered atmosphere. Below 100 ℃, the thermal expansion coefficient of the sintered part was smaller than 0.64 × 10^-6/K, which measures up the demands of Invar low expansion alloy (Invar alloy) totally: between 20-100℃ the thermal expansion coefficient α≤1.8 ×10^- 6/℃.
分 类 号:TG13[一般工业技术—材料科学与工程]
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