InGaAsP／InP　MQW电流控制型双稳／非线性增益开关激光器  

InGaAsP/InP MQW Current-Controlled Bistable Lasers/ Nonlinear Switch Gates With Gain

作　　者：张权生[1] 石志文[1] 杜云[1] 颜学进[1] 赵军[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室

出　　处：《Journal of Semiconductors》1996年第11期813-816,共4页半导体学报（英文版）

基　　金：863计划;国家自然科学基金

摘　　要：一种电流控制型二端及三端ＭＱＷ（多量子阱）ＩｎＧａＡｓＰ／ＩｎＰ双区共腔双稳／非线性增益开关激光器业已研制成功，文中报道了部分结果．Abstract A kind of current-controlled InGaAsP/InP multiquantum well(MQW) two-section bistable laser/nonlinear switch gate with gain has been developed. Some of bistable hysteresis characteristics are given. The lowest value of the turn-on threshold current obtained was 22 mA at room temperature, which is the best value reported in the literature.

关 键 词：双稳激光器 InGaAs 磷化铟 多量子阱 

分 类 号：TN248[电子电信—物理电子学]