化学表面处理对微型化的氮氧化硅驻极体层电荷储存性能的影响  

Influence of chemical surface treatment on charge storage stability for miniature Si_3N_4/SiO_2 electret film

作　　者：沈莉莉[1] 夏钟福[1] 周涛[1] 付晓明[1] 张晓青[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092

出　　处：《功能材料与器件学报》2007年第1期13-17,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(NO.50503018);中德驻极体合作课题(Ref.I/77365)

摘　　要：研究了化学表面处理对微型化的氮氧化硅膜电荷稳定性的影响,考察了表面处理对脱阱面电荷横向扩散的抑止作用。借助对微型化前后的样品在高温和高湿环境中的表面电位衰减测量的对比,研究了不同试剂的表面处理对微型化样品的电荷储存及其动态特性的影响。The influence of chemical surface treatment on charge stability for miniature Si3N/SiO2 films was discussed, the inhibit effect of the surface treatment to the lateral diffusion of detrapping charge was investigated. For different chemical reagents, the charge stability and their dynamic of miniature samples after the treatment were studied by comparing the results of surface potential decay under high - tempera- ture and high - humidity conditions between the miniature Si3N4/SiO2 electret film and the bulk film based on silicon.

关 键 词：氮氧化硅驻极体 表面处理 微型化 电荷稳定性及其动态特性 

分 类 号：O484.4[理学—固体物理]