嵌入式存储器的内建自修复设计  

A Built-In Self-Repair Design for Embedded Memory

作　　者：吴志伟[1,2] 邹雪城[1] 雷鑑铭[1,2] 刘勇 

机构地区：[1]华中科技大学电子科学与技术系 [2]亚芯微电子有限公司,湖北武汉430073

出　　处：《微电子学与计算机》2007年第2期79-81,84,共4页Microelectronics & Computer

摘　　要：目前,关于嵌入式存储器的内建自测试(MBIST)技术已经日趋成熟。基于这种背景,研究了一种高效的内建自修复(MBISR)方法,试验表明它具有低面积开销和高修复率等优点,保证了嵌入式存储器不仅可测,而且可修复,极大地提高了芯片的成品率。The technology of memory built-in self-test （MB1ST） about embedded memories is growing more perfect, based on this background, we present a reasonable method for memory built-in self-repair （MBISR）, experimental results show that a high repair rate and a low area overhead are, achieved with the BISR scheme, such that the embedded memories can be tested and repaired simultaneously, and the performance can be improved dramatically.

关 键 词：嵌入式存储器 内建自测试 内建自修复 

分 类 号：TN4[电子电信—微电子学与固体电子学]