一种新型力电耦合超晶格半导体结构研究  

A New Electric-mechanical Coupled Study on Superlattice Structure in Semiconductors

作　　者：张斌珍[1] 李科杰[1] 张文栋[2] 薛晨阳[2] 

机构地区：[1]北京理工大学机电工程学院,北京100081 [2]中北大学电子测试技术国家重点实验室,山西太原030051

出　　处：《兵工学报》2007年第2期178-181,共4页Acta Armamentarii

基　　金：国家自然科学基金资助项目(50405025;50375050)

摘　　要：采用分子束外延方法在GaAs衬底(001)上生长了AlAs/GaAs双势垒超晶格薄膜结构,测试出超晶格薄膜在室温下随着外加压力变化下,其I-V特性曲线的漂移与外加压力成一定比例关系。为基于MEMS共振隧穿效应的力电耦合传感器的研究提供了一定的基础。Double potential barrier superlattiee quantum membrane made from AlAs/GaAs has been grown through molecular beam epitaxy technology on （001）-oriented GaAs substrates. Pressure-dependent current-voltage characteristics of superlattice film were studied in room temperature. Measured results show that the drift of I-V curve is proportional to the applied force. It provides a basis of research for electric-mechanical coupled transducer based on resonant tunneling effect.

关 键 词：半导体技术 力电耦合 共振隧穿效应 超晶格薄膜 

分 类 号：TN304.23[电子电信—物理电子学] TG156[金属学及工艺—热处理]