熔融铈快速抛光CVD金刚石厚膜及表面分析  

Study on the rapid polishing of CVD thick diamond films by molten cerium and surface analysis

作　　者：孙玉静[1] 王树彬[1] 田莳[1] 

机构地区：[1]北京航空航天大学材料科学与工程学院,北京100083

出　　处：《功能材料》2007年第2期326-329,共4页Journal of Functional Materials

摘　　要：利用熔融稀土铈(Ce)对CVD金刚石厚膜进行了抛光研究。详细讨论了工艺参数对抛光速率和表面粗糙度Ra的影响,获得了最佳抛光工艺。通过对抛光后金刚石膜表面的拉曼光谱(Raman)、俄歇能谱(AES)、扫描电镜(SEM)以及能谱(EDS)的分析,探讨了抛光机理。结果表明:该方法有很高的抛光速率,可达每小时数百微米。抛光后金刚石膜的Ra从10.845μm降低至0.6553μm。抛光的热处理工艺不但没有破坏金刚石表面的原始结构,而且由于铈对石墨的优先刻蚀,抛光后金刚石膜表面的石墨含量还大大减少。The polishing of CVD thick diamond films by molten rare earth Cerium（Ce） was studied. The influences of process parameters on the removal rate and surface roughness Ra were discussed in detail,and the optimal polishing condition was obtained. The polishing mechanism was investigated via the analyses of Raman spectra,Auger energy spectra （AES）, scanning electronic microscope （SEM） and energy dispersive spectra （EDS）. The results show this method has quite high polishing rate,which can approach few hundreds of micrometers per hour,and the Ra value of polished diamond films at 850℃ for 0.5h could be decreased from 10. 845 to 0. 6553 μm. The original structure of polished diamond films have not been changed by the polishing heat treatment, and the graphite content on the surface of polished ones has reduced greatly due to Ce＇s preferential etching to graphite.

关 键 词：CVD金刚石膜 熔融稀土 抛光 

分 类 号：O485[理学—固体物理] TN305[理学—物理]