利用金属过渡层低温键合硅晶片  

Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

作　　者：张小英[1] 陈松岩[1] 赖虹凯[1] 李成[1] 余金中[1] 

机构地区：[1]厦门大学物理系半导体光子学研究中心,厦门361005

出　　处：《Journal of Semiconductors》2007年第2期213-216,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60336010);福建省自然科学基金(批准号:A0410008)资助项目~~

摘　　要：在Si/Si之间采用Ti/Au金属过渡层,实现了Si/Si低温键合,键合温度可低至414℃.采用拉伸强度测试对Si/Si键合结构的界面特性进行测试,结果表明,键合强度高于1.27MPa;I-V测试表明,Si/Ti/Au/Ti/Si键合界面基本为欧姆接触;X射线光电子能谱(XPS)测试结果进一步表明,界面主要为Si-Au共晶合金.不同温度的变温退火实验表明,键合温度越高,键合强度越大,且渐变退火有利于提高键合强度.Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers. The bonding temperature can be reduced to 414℃. The Si / Si bonding strength has been investigated by tensile strength. The results show that the bonding strength exceeds 1.27MPa. I-V tests show that the interface of Si/Ti/Au/Ti/Si is an ohmic contact, and XPS tests indicate that the interface mainly comprises Si-Au eutectic alloy. Different experiments by annealing at gradually changing tempera- ture show that the higher the bonding temperature is,the stronger the bonding energy is. In addition, annealing at gradually changing temperature is propitious to increase bonding strength.

关 键 词：硅片键合 界面特性 金属过渡层 键合机理 

分 类 号：TN304.05[电子电信—物理电子学]