功率器件硼基区注入工艺研究  

An Investigation into Boron Base Implantation for Power Devices

作　　者：曾莉[1,2] 税国华[1,2] 李杰[1,2] 

机构地区：[1]模拟集成电路国家重点实验室 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2007年第1期24-27,共4页Microelectronics

摘　　要：随着功率双极集成电路在军民两用的各种电源管理、功率驱动等领域的广泛应用,以及集成电路生产规模的进一步扩大,对参数一致性、重复性、均匀性的要求越来越高;文章重点介绍功率器件硼基区注入工艺,对工艺原理和工艺方案进行了详细阐述;并给出了工艺结果以及在产品中的应用情况。The application of power bipolar IC＇s in power management and power drive and the increasing scale of IC production are imposing strict requirements on device parameters for consistency, repeatability and uniformity. In this paper, boron ion implantation into base region of power devices is described. The principle of the process and specific process scheme are elaborated. Results of the process and its applications in production are also presented.

关 键 词：功率器件 离子注入 硼基区 集成电路工艺 

分 类 号：TN305.3[电子电信—物理电子学]