MOSFET迁移率增强技术  

An Overview of Mobility Enhancement Technologies for MOSFET's

作　　者：胡爱斌[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2007年第1期61-66,共6页Microelectronics

摘　　要：随着MOSFET特征尺寸的缩小,载流子的迁移率降低已成为器件性能衰退的主要因素之一,迁移率增强技术因此获得了广泛的研究和应用。衬底诱生应力、工艺诱生应力和采用不同的衬底晶向等三类方法都可以显著提高载流子的迁移率。文章综述了常见的几种迁移率增强技术。As the feature size of MOSFET＇s is scaling down, carrier mobility degradation has become one of the key factors of device degradation. As a result, mobility enhancement technologies have been extensively studied and widely applied. Substrate induced stress, process induced stress and use of different substrate orientations are major techniques that can significantly enhance carrier mobility. This article reviews common technologies for mobility enhancement.

关 键 词：MOSFET载流子迁移率 衬底诱生应力 工艺诱生应力 衬底晶向 

分 类 号：TN432[电子电信—微电子学与固体电子学]