一种用于升压型DC/DC变换器的低压带隙基准源  

A Low-Voltage and Low-Power Bandgap Voltage Reference for DC/DC Converters

作　　者：杨喆[1] 姚素英[1] 徐江涛[1] 

机构地区：[1]天津大学电子信息工程学院ASIC设计中心,天津300072

出　　处：《微电子学》2007年第1期105-108,112,共5页Microelectronics

摘　　要：设计了一种应用于升压型DC／DC转换器芯片的高精度、低电压、低功耗带隙基准电压源，包含恒定电流的偏置电路、低压低功耗的运算放大器、三极管级联的带隙基准核心电路和低压启动电路四个部分。经过理论分析和仿真模拟，采用华虹NEC的5V 0．35μm 1P4M工艺流片成，功。电路实测结果为：输出电压Vout=1．2V，温度系数12．5ppm／℃，工作电压1．3～5V，随电源电压的变化率为O．78mV／V，3V供电下功耗9μA。该带隙基准源可用于实际产品的批量生产。A high-precision, low-voltage and low-power bandgap voltage reference source for boost DC/DC converters is presented, which contains a constant current bias circuit, a low-voltage and low-power op-amp, a bandgap reference core with BJT cascaded, and a low-voltage start-up circuit. After theoretical analysis and simulation, the circuit was fabricated in Huahong-NEC＇s 5 V 0. 35 μm 1P4M dual-well CZ6 process. Test results show that the circuit has an outPut voltage of 1.2 V and a temperature coefficient of 12. 5 ppm/℃. Operating from 1.3 V to 5 V supply power, the circuit consumes 14 μA of power at 3 V supply with variation rate of 0.78 mV/V.

关 键 词：CMOS带隙基准源 升压型DC/DC转换器 恒流偏置电路 

分 类 号：TN492[电子电信—微电子学与固体电子学]