掺TiO_2的ZnO薄膜气敏特性研究  

Investigation on Gas Sensing Properties of Nanosized ZnO Thin Films Doped with TiO_2

作　　者：邱美艳[1] 杜鹏[1] 孙以材[1] 潘国锋[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《电子器件》2007年第1期37-40,45,共5页Chinese Journal of Electron Devices

摘　　要：用直流磁控溅射法分别在Si(111)基片及陶瓷基片上制备掺有TiO2的ZnO薄膜,并进行500℃、700℃退火处理,对掺杂前后ZnO薄膜进行XRD分析,测试各掺杂样品气敏特性.500℃退火后,各掺杂样品对有机气体有较高的灵敏度,随着掺杂时间延长,气敏特性提高.700℃退火后,2min掺杂的样品对乙醇有很高的灵敏度和很好的选择性,最佳工作温度为220℃左右.而其他掺杂量的样品对乙醇气体灵敏度低,随着掺杂时间延长,气敏特性降低.Nanosized ZnO thin films doped with TiO2 were prepared both on Si（111） and alumina substrates by DC magnetron sputtering. Afterwards annealing was carried out respectively at 500℃ and 700℃. The structure was studied by XRD and the sensing properties were tested, the sample showed higher sensitivity towards the organic vapor after 500℃ annealing. The longer was TiO2 doping time , the better were the sensing properties. After 700 ℃ annealing, the sample with 2 minutes doping showed excellent selectivity and high sensitivity towards ethanol vapor. The best operating temperature is 220℃. While the sensitivity towards ethanol vapor of the other sample were low, and the sensing properties decreased with the increase of doping time beyond 2 minutes.

关 键 词：ZNO薄膜 掺杂 溅射 气敏特性 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]