UFPA器件微桥腐蚀工艺的研究  

Etching microbridge for UPFA devices

作　　者：姜胜林[1] 江勤[1] 陈实[1] 刘梅冬[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2007年第2期74-76,共3页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家重点基础研究计划资助项目(2004CB619300);教育部"新世纪优秀人才支持计划"资助项目(NCET-04-0703)

摘　　要：利用硅单晶的各向异性腐蚀技术,研究了UFPA探测器的微桥腐蚀工艺.采用独特的腐蚀装置在厚度为300μm的硅基片上成功地制备了腐蚀坑深度为260μm,桥面宽度为2 mm的微桥结构.该装置能有效保护硅基片正面免受腐蚀液的漏蚀,从而可实施热释电薄膜的沉积先于微桥制备的技术线路,对提高器件的成品率具有重要的意义.The etching processing of micro-bridge was designed. The uncooled infrared focal plane arrays （UFPA） micro-bridges on a silicon chip whose thickness is 300μm have been fabricated by wet chemical etching technique. The etch pits are 260μm in depth and 2 mm in width. Using the technics and mechanism of anisotropic etching of monocrystalline silicon in unique etching equipments, the micro-patterns of the front side are protected effectively without being etching. The technique route that the preparation of films in advance of the fabrication of Si micro-bridges is carried out, which means the improvement of UFPA finished products.

关 键 词：非制冷红外焦平面阵列 微桥 各向异性腐蚀 腐蚀装置 

分 类 号：TM215[一般工业技术—材料科学与工程]