Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing  

作　　者：李志刚 龙世兵 刘明 王丛舜 贾锐 闾锦 施毅 

机构地区：[1]Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [2]National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China

出　　处：《Chinese Physics B》2007年第3期795-798,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China （973 Program） （Grant No 2006CB302706） and the National Natural Science Foundation of China （Grant Nos 90607022, 904010027 90207004, and 60506005）.

摘　　要：The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.

关 键 词：NC-SI hydrogenated nanocrystalline silicon charge storage rapid thermal annealing 

分 类 号：TN304.12[电子电信—物理电子学]