硅中氮的电学行为的研究  

Investigation of Electrical Behaviour of Nitrogen in Silicon

作　　者：佘思明[1] 李冀东[1] 廖平婴 

机构地区：[1]中南工业大学应用物理系

出　　处：《Journal of Semiconductors》1996年第4期269-274,共6页半导体学报（英文版）

基　　金：浙江大学硅材料国家重点实验室资助

摘　　要：用红外光谱等方法研究了硅中氮的电学行为．结果指出：氮对热施主无明显的促进和抑制作用；ＮＣＺＳｉ中不存在“热受主”，ＮＣＺＳｉ的电学性质上的特点是氮氧复合物施主；氮氧复合物及其施主呈现可逆性；ＮＣＺＳｉ的电阻率稳定化处理温度初步可选为９００℃．Abstract The electrical behaviour of nitrogen in silicon has been investigated by means of FTIR etc. The experimental results show that nitrogen does not distinctly enhance or inhibit the formation of thermal donors : 'thermal acceptors' are not formed in NCZSi ; the electrical character of NCZSi is of the donors of N-O complex ; the N-O complex and its donors appears reversible; the temperature of resistivity stabilization treatment of NCZSi may be preliminarily selected at 900℃.

关 键 词：硅 氮 电学行为 半导体材料 

分 类 号：TN304.12[电子电信—物理电子学]